Koj puas tau siv Ultrasonic Txau hauv Kev Lag Luam Photoresist?

Daim ntawv thov tseem ceeb ntawm ultrasonic atomization spraying nyob rau hauv kev lag luam photoresist yog txheej txheej ntawm photoresist nrog siab precision, siab uniformity, thiab qib siab kev pab them nqi. Nws yog qhov zoo tshwj xeeb ntawm kev daws teeb meem txheej txheej ntawm 3D microstructures, qhov sib piv siab, thiab cov substrates loj / tsis xwm yeem uas nyuaj los ntawm cov txheej txheem spinning, thaum txhim kho kev siv cov khoom siv thiab tawm los.

1. Semiconductor Wafer Txheej (Cov ntawv thov tseem ceeb)

Planar Wafer Coating: Used for 12-inch and larger wafers, achieving ultra-thin, uniform photoresist layers (thickness 50–500 nm), with thickness error controllable within ±0.3–0.4 μm and uniformity >95%, txhim kho qhov raug raug thiab nti tawm los.

Complex Structure Wafer Txheej: Targeting sib sib zog nqus trenches, TSVs, thiab cov nam piv cov qauv siab, daws cov spin-cov teeb meem xws li ntug buildup, hauv qab uas tsis muaj kev tiv thaiv, thiab shadowing cuam tshuam, ua tiav cov kev pab them nqi ntawm sidewalls thiab hauv qab, kom ntseeg tau tias etching / ion implantation raug.

2. MEMS thiab Microstructure Device Txheej

Txheej ntawm 3D complex morphological nto xws li MEMS chips, microfluidic chips, sensors, thiab micromirrors, muab cov kauj ruam zoo tshaj plaws, tshem tawm cov fab tuag thiab npuas, thiab txhim kho cov cuab yeej kev ntseeg siab.

Tshwj xeeb substrates thiab Flexible Electronic Txheej

Txheej ntawm cov uas tsis yog-silicon substrates xws li iav, ceramics, hlau, thiab hloov tau yooj yim substrates (piv txwv li, PI, PET), haum rau irregularly zoo li tus/loj- qhov loj / tsis yooj yim, zam lub fragmentation txaus ntshai tshwm sim los ntawm high -ceev centrifugation thaum lub sij hawm spinning txheej.

Txheej ntawm photoresist/functional khaubncaws sab nraud povtseg ntawm saj zawg zog / nkhaus substrates xws li saj zawg zog OLEDs thiab perovskite solar cells.

R&D thiab me -Batch Prototyping

Laboratory R&D, cov ntaub ntawv pov thawj tshiab, thiab me me -batch prototyping: hloov pauv sai, tswj cov yeeb yaj kiab tuab, thiab siv cov khoom siv tsawg, tsim nyog rau kev tsim kho photoresist formulation thiab txheej txheem iteration.

Cov txheej txheem hybrid (Spin Txheej + Ultrasonic Txau)

Ua ntej, cov tshuaj tsuag ultrasonic tsim cov yeeb yaj kiab tsis sib xws, tom qab ntawd siab - nrawm nrawm txheej evens cov nplaum, sib npaug sib npaug, cov kauj ruam kev pab cuam, thiab kev ua haujlwm ntau lawm, tsim rau cov txheej txheem siab heev.

Cov Txheej Txheem Txheej Txheem (Reference)

●Atomization zaus: 20-120 kHz (100 kHz feem ntau siv)

● Atomization Particle Loj: 0.5-50 μm (submicron qib)

●Film Thickness Range: 50 nm–5 μm (50–500 nm feem ntau yog siv rau precision txheej)

● Thickness Uniformity: ± 0.3-0.5 μm (12-nti wafer)

●Material Utilization: >90%